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تماس با شخص : Wang Hong

How a new generation of high-voltage doorknob capacitors is pushing the boundaries of NMR technology

محل منبع شیان، چین
نام تجاری XIWUER
گواهی ISO9001,ISO14001,ISO45001
سند High Voltage Ceramic Capaci...25.pdf
مقدار حداقل تعداد سفارش 1 عدد
قیمت قابل مذاکره
جزئیات بسته بندی کارتن
زمان تحویل 5-7 روز
شرایط پرداخت L/C ، T/T
قابلیت ارائه 4000000 عدد در سال

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جزئیات محصول
اتلاف 0.0040 ≦ ولتاژ مقاوم 1.5UR ● 1 دقیقه
مقاومت عایق ≧ 1.0 × 105mΩ
برجسته کردن

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توضیحات محصول

A Revolution in Dielectric Materials: From Stability to Functionality

Traditional capacitor dielectric materials often struggle to balance temperature stability and voltage coefficient. Our specialized barium strontium titanate-based composite ceramic dielectrics, developed through precise rare earth element doping and microstructural manipulation, achieve three breakthrough properties:

Near-zero voltage coefficient: Within the rated operating voltage range, the capacitance variation is controlled to within ±0.1%, ensuring accurate RF pulses at various power levels.

Wide Temperature Stability: Capacitance drift is less than ±0.5% from -55°C to +125°C, meeting the requirements of a full range of probe applications, from ambient to cryogenic temperatures.

Adaptive Dielectric Properties: In strong external magnetic fields, the dielectric material's magnetic susceptibility remains below 10⁻⁸, completely eliminating interference with the main magnetic field uniformity.

Drawing:
How a new generation of high-voltage doorknob capacitors is pushing the boundaries of NMR technology 0

Parameters:

No. Specification Dissipation Withstanding voltage Insulation resistance Dimension(mm)
1 20kV-2000pF








≦0.0040








1.5Ur 1min








≧1.0×105MΩ

D H L D M
2 20kV-10000pF 45 19 23 12 5
3 20kV-18000pF 65 15 19 12 5
4 30kV-1000pF 80 17 25 12 5
5 30kV-2700pF 45 24 32 12 4
6 30kV-12000pF 60 20 28 12 4
7 40kV-150pF 20 33 41 8 4
8 40kV-500pF 28 33 41 8 4
9 40kV-7500pF 80 24 29 12 6
10 40kV-10000pF 80 22 26 16 5
11 50kV-1000pF 50 30 34 12 4
12 50kV-1000pF 32 27 31 16 5
13 50kV-5600pF 80 31 35 16 5
14 60kV-1500pF 50 31 34 12 5
15 60kV-3000pF 65 32 35 16 5
16 100kV-500pF 50 54 58 12 5
17 100kV-2000pF 51 32 35 16 5
18 Insulator type 100kV-1500pF 68 36 40 16 5
19 150kV-820pF 65 95 100 12 5
20 200kV-600pF 50 90 94 16 5


A Revolution in Dielectric Materials: From Stability to Functionality

Traditional capacitor dielectric materials often struggle to balance temperature stability and voltage coefficient. Our specialized barium strontium titanate-based composite ceramic dielectrics, developed through precise rare earth element doping and microstructural manipulation, achieve three breakthrough properties:

Near-zero voltage coefficient: Within the rated operating voltage range, the capacitance variation is controlled to within ±0.1%, ensuring accurate RF pulses at various power levels.

Wide Temperature Stability: Capacitance drift is less than ±0.5% from -55°C to +125°C, meeting the requirements of a full range of probe applications, from ambient to cryogenic temperatures.

Adaptive Dielectric Properties: In strong external magnetic fields, the dielectric material's magnetic susceptibility remains below 10⁻⁸, completely eliminating interference with the main magnetic field uniformity.

The Engineering Value of Structural Innovation

The extremely compact interior of an MRI scanner poses significant challenges to component layout. Our 3D stacked doorknob capacitor addresses several pain points in traditional designs through its innovative internal connection architecture:

40% improvement in space utilization: Optimized electric field distribution enables higher energy density within the same volume.

Integrated thermal management: Direct thermal connection between the built-in micro heat pipe and the housing reduces thermal resistance by 30%, ensuring temperature stability under sustained high-power pulses.

Modular interconnect design: The patented snap-on connection system enables rapid assembly and maintenance, significantly reducing system integration complexity.